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ST223C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 390 A
FEATURES
* Metal case with ceramic insulator * All diffused design * Center amplifying gate
TO-200AB (A-PUK)
RoHS
COMPLIANT
* Guaranteed high dV/dt * International standard case TO-200AB (A-PUK) * Guaranteed high dI/dt * High surge current capability * Low thermal impedance * High speed performance * Lead (Pb)-free
390 A
PRODUCT SUMMERY
IT(AV)
TYPICAL APPLICATIONS
* Inverters * Choppers * Induction heating * All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IT(AV) IT(RMS) TEST CONDITIONS VALUES 390 Ths 55 745 Ths 50 Hz 60 Hz 50 Hz 60 Hz 25 5850 6130 171 156 400 to 800 Range 10 to 30 - 40 to 125 UNITS A C A C A
ITSM I2 t VDRM/VRRM tq TJ
kA2s V s C
ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS
TYPE NUMBER VOLTAGE CODE 04 08 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V 400 800 VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 500 900 IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 40
ST223C..C
Document Number: 93672 Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
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ST223C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 390 A
CURRENT CARRYING CAPABILITY
ITM 180 el 180 el ITM 100 s ITM
FREQUENCY
UNITS
50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt Heatsink temperature Equivalent values for RC circuit
930 910 780 490 50 VDRM 50 40 47/0.22
800 770 650 400
1430 1490 1430 1070 50 VDRM -
1220 1300 1260 920
5870 3120 1880 1000 50 VDRM -
5240 2740 1640 860 V A/s 55 47/0.22 C /F A
55
40 47/0.22
55
40
ON-STATE CONDUCTION
PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave Double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Maximum peak on-state voltage Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current I2t VTM VT(TO)1 VT(TO)2 rt1 rt2 IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 390 (150) 55 (85) 745 5850 6130 4920 Sinusoidal half wave, initial TJ = TJ maximum 5150 171 156 121 110 1710 1.58 1.05 1.09 0.88 0.82 600 1000 m mA V kA2s kA2s A UNITS A C
t = 0.1 to 10 ms, no voltage reapplied ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum TJ = 25 C, IT > 30 A TJ = 25 C, VA = 12 V, Ra = 6 , IG = 1 A
SWITCHING
PARAMETER Maximum non-repetitive rate of rise of turned on current Typical delay time SYMBOL dI/dt td TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt TJ = 25 C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s Resistive load, gate pulse: 10 V, 5 source TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/s VR = 50 V, tp = 500 s, dV/dt: See table in device code 10 VALUES MIN. MAX. 1000 0.78 s 30 UNITS A/s
Maximum turn-off time
tq
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Document Number: 93672 Revision: 14-May-08
ST223C..C Series
Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 390 A
BLOCKING
PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum, linear to 80 % VDRM, higher value available on request TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 40 UNITS V/s mA
TRIGGERING
PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Maximum DC gate current required to trigger Maximum DC gate voltage required to trigger Maximum DC gate current not to trigger Maximum DC gate voltage not to trigger SYMBOL PGM PG(AV) IGM + VGM - VGM IGT VGT IGD VGD TJ = 25 C, VA = 12 V, Ra = 6 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES 60 10 10 20 5 200 3 20 0.25 UNITS W A V mA V mA V
TJ = TJ maximum, rated VDRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER Maximum operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.17 0.08 0.033 0.017 4900 (500) 50 See dimensions - link at the end of datasheet N (kg) g K/W UNITS C
Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style
RthC-hs
TO-200AB (A-PUK)
RthJ-hs CONDUCTION
CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.015 0.019 0.024 0.035 0.060 DOUBLE SIDE 0.017 0.019 0.024 0.035 0.060 RECTANGULAR CONDUCTION SINGLE SIDE 0.011 0.019 0.026 0.036 0.060 DOUBLE SIDE 0.011 0.019 0.026 0.037 0.061 TJ = TJ maximum K/W TEST CONDITIONS UNITS
Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 93672 Revision: 14-May-08
For technical questions, contact: ind-modules@vishay.com
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ST223C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 390 A
1 30 M a x im u m A llo w a b le H e a t sin k T e m p e rat u re ( C ) ST 2 2 3 C ..C S e rie s (Sin g le S id e C o o le d ) R thJ- hs (D C ) = 0 .1 7 K / W 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 A v e ra g e O n -st a te C u rre n t (A ) 30 60 90 1 2 0 1 8 0 DC 10 0 2 00 3 00 40 0 50 0 60 0 70 0 8 00
C o ndu ction Pe rio d
130 M a xim u m A llo w a b le H e a tsin k T e m p e r at u re (C ) 120 110 100 90 80 70 60 50 40 30 0 50 100 150 20 0 2 50 3 00 A v e ra g e O n -st a t e C u rre n t (A ) 30 6 0 90 1 2 0 180
C o nd uc tio n A ng le
ST 2 2 3 C ..C S e rie s (D o ub le Sid e C o o le d ) R thJ- hs (D C ) = 0 .0 8 K/ W
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
13 0 M a xim u m A llo w a b le H e a tsin k T e m p e ra tu re ( C ) 12 0 11 0 10 0 90 80 70 60 50 40 30 20 0 30
Maximum Average On -state Power Loss (W )
ST 2 2 3 C ..C S e rie s (Sin g le S id e C o o le d ) R t hJ- hs (D C ) = 0 .1 7 K / W
1000 180 120 90 60 30
800
600
RM S Lim it
C o ndu ctio n Pe rio d
400
C o nduc tio n A ng le
60 90 1 20 180 DC 50 1 0 0 1 50 20 0 25 0 3 00 3 5 0 40 0 45 0 A v e ra g e O n -s ta t e C u rre n t (A )
200
ST223C..C Series TJ = 125C 0 100 200 300 400 500
0 Average On -state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
1 30 M a xim u m A llo w a b le H e a tsin k T e m p er a tu r e ( C ) 1 20 1 10 1 00 90 80 70 60 50 40 30 20 0 10 0 200 3 00 4 00 5 00 A v e ra g e O n -st a t e C u rre n t (A ) 30 60 90 120
C o nduc tion An gle
Maxim um Average O n-sta te Power Loss (W )
S T 2 2 3 C ..C S e rie s (D o u b le S id e C o o le d ) R th J-hs (D C ) = 0 .0 8 K / W
1400 1200 1000 800 600 400 200 0 0 100 200 300 400 500 600 700 800 Average O n-state Curren t (A)
C o nd uc tio n Pe rio d
DC 180 120 90 60 30
RMS Limit
1 8 0
ST223C..C Series TJ = 125C
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
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Document Number: 93672 Revision: 14-May-08
ST223C..C Series
Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 390 A
5500 Peak Half Sine W ave On -state Current ( A) 5000 4500 4000 3500 3000 ST223C..C Series 2500 1 10 1 00
N um b e r O f E qu al A m plitud e Half Cy c le C urre nt Pulse s (N )
Tr a n sie n t Th e rm a l Im p e d a n c e Z thJ-hs (K/ W )
At Any Rated Load Condition An d W ith Rated V RRM Applied Followin g Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
1 ST 2 2 3 C ..C S e rie s
0 .1
0 .0 1
S t e a d y S ta t e V a lu e R thJ-h s = 0 .1 7 K/ W (S in g le Sid e C o o le d ) R thJ-hs = 0 .0 8 K/ W (D o u b le S id e C o o le d ) (D C O p e ra tio n ) 0 .0 1 0 .1 1 10
0 .0 0 1 0 .0 0 1
S q ua re W a v e P u lse D u rat io n (s)
Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
6000 P e a k H a lf Sin e W a v e O n -st at e C u rre n t (A )
M a x im u m R e v e rse R e c o v e ry C h a rg e - Q rr (C )
M a x im u m N o n R e p e t it iv e S urg e C u rre n t V e rsu s P u lse T ra in D ura t io n . C o n t ro l 5500 O f C o n d u c t io n M a y N o t Be M a in ta in e d . In it ia l TJ = 1 2 5 C 5000 N o V o lta g e R e a p p lie d R a te d V RRMR e a p p lie d 4500 4000 3500 3000 2500 S T2 2 3 C ..C S e r ie s
2 50 S T 2 2 3 C ..C S e rie s TJ = 1 2 5 C
I TM = 5 00 A 30 0 A 20 0 A
2 00
1 50
1 00 A
1 00
50 A
50
2000 0.01
0 0 20 40 60 80 1 00 R a t e O f F a ll O f O n -st a t e C u rre n t - d i/ d t (A / s)
0.1 P u lse T ra in D u ra tio n (s)
1
Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled
Fig. 11 - Reverse Recovered Charge Characteristics
10000 M a xim u m R e v e rse R e c o v e ry C u rr e n t - Irr (A ) In st anta neous On-state Current (A)
16 0
IT M = 50 0 A
14 0 12 0 10 0 80 60 40 20 0 0 20
30 0 A 20 0 A 10 0 A 50 A
1000 T = 25C J TJ = 125C
ST223C..C Series 100 0 2 4 6 8 10 In sta ntaneous O n-state Voltage (V )
ST 2 2 3 C ..C S e rie s TJ = 1 2 5 C 40 60 80 10 0
R a t e O f F a ll O f F o rw a rd C u rre n t - d i/ d t (A / s)
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 12 - Reverse Recovered Current Characteristics
Document Number: 93672 Revision: 14-May-08
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ST223C..C Series
Vishay High Power Products
Inverter Grade Thyristors (Hockey PUK Version), 390 A
Snubbe r circ uit R s = 4 7 o hm s C s = 0.22 F V D = 80 % V D RM 400 20 0 1 00 0 50 0 100 50 Hz
1 E4
P e a k O n - st a t e C u rre n t (A )
Snubb er c ircuit R s = 4 7 o hm s C s = 0. 22 F V D = 80 % V D RM 100 0 5 00 4 00 200 1 00 5 0 Hz 1 50 0 2 50 0 3 00 0 ST2 23 C.. C Serie s Sinuso idal pulse TC = 40C 5 00 0 tp
1 50 0
1 E3
2 50 0 3 00 0 5 00 0 1 0 00 0
tp
10 00 0
ST2 23 C.. C Se ries Sinuso idal pulse TC = 55C
1 E2 1E1
1 E2
1 E3
1E4
1 E1 1 1E
1E2
1 E3
1E4
P u lse Ba se w id t h ( s)
P u lse Ba se w id t h ( s)
Fig. 13 - Frequency Characteristics
1E4
Snu bbe r c irc uit R s = 4 7 o hm s C s = 0.22 F V D = 80% V D RM
P e a k O n -sta t e C u rre n t (A )
Snubbe r circ uit R s = 4 7 o hm s C s = 0.22 F V D = 8 0 % V D RM
15 0 0 10 00 5 00 400 2 00 10 0 50 Hz
1E3
2 50 0 3 00 0 5 00 0
2 50 0 3 00 0 5 00 0 1 00 00
ST22 3C ..C Se rie s Tra pe zoidal pulse TC = 40C di/dt = 5 0A / s
1 50 0
10 00 5 00
400 2 00 1 0 0
50 Hz
1E2
10 0 00
tp
ST2 23 C..C Series Trape zoidal pulse TC = 55C di/dt = 50A /s
tp
1E1 1 E1
1 E2
1 E3
1E4
1 E1
1 E2
1E3
1E4
P u lse B ase w idt h ( s)
P u lse Ba se w id t h ( s)
Fig. 14 - Frequency Characteristics
1E4
P e a k O n - sta t e C u rre n t (A )
Snubb er c ircu it R s = 47 o hm s C s = 0 .22 F V D = 80 % V D RM 1 0 00 500 10 0 4 00 20 0 5 0 Hz
Snubbe r circ uit R s = 4 7 o hm s C s = 0.2 2 F V D = 80% V D RM 5 00 4 00 2 0 0 1 00 50 Hz
1E3
25 0 0 3 00 0 5 00 0 1 50 0
2 50 0 3 000 5 00 0
ST223 C. .C Se ries Tra pezo idal pulse TC = 40C di/d t = 1 00A /s
1 50 0
1 000
1E2
1 00 0 0
10 00 0 tp
tp
ST223 C. .C Se ries Trap ezo id al p ulse TC = 55C di/dt = 10 0A /s
1E1 1 E1
1 E2
1E 3
1E4
1 E1
1E 2
1E3
1E4
P u lse B ase w id t h ( s)
P u lse Ba se w id t h ( s)
Fig. 15 - Frequency Characteristics
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Document Number: 93672 Revision: 14-May-08
ST223C..C Series
Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 390 A
1E 5
ST22 3C. .C Se ries Re cta ngular pulse di/d t = 5 0A/s 20 jo ule s p er pulse 5 2 1 0.5 0. 3 0. 2 0 .1 tp ST223 C ..C Se ries Sinuso id al p ulse 10
tp
P e ak O n -sta t e C ur re n t (A )
1E 4
2 4 10 2 0 jo ules per pulse
1E 3
0. 2 0.1
0.5 0 .3
1
1E 2
1E 1 1 E1
1E2
1 E3
1 E4
1 E1
1E 2
1E3
1E4
P u lse B a se w idt h ( s)
P u lse B ase w id t h ( s)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
1 00 Re c t a n g ula r g a t e p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< =1 s (b )
Tj=-40 C Tj=2 5 C Tj=1 25 C
In st an t a n e o us G a te V o lt a g e ( V )
(1) (2) (3) (4) (a )
PGM PGM PGM PGM
= = = =
1 0W , 2 0W , 4 0W , 6 0W ,
tp tp tp tp
= = = =
20 m s 10 m s 5m s 3 .3 m s
1 VGD IG D 0 .1 0 .0 0 1 0 .0 1
(1)
(2)
(3 ) ( 4 )
D e v ic e : ST 2 2 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V ) 0 .1 1 10 1 00
In sta n t a n e o u s G at e C u rr e n t (A )
Fig. 17 - Gate Characteristics
Document Number: 93672 Revision: 14-May-08
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ST223C..C Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Inverter Grade Thyristors (Hockey PUK Version), 390 A
Device code
ST
1
1 2 3 4 5 6 7 8 9
22
2 -
3
3
C
4
08
5
C
6
H
7
K
8
1
9
10
Thyristor Essential part number 3 = Fast turn off C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) C = PUK case TO-200AB (A-PUK) Reapplied dV/dt code (for tq test condition) tq code dV/dt - tq combinations available
20 50 100 200 400
-
dV/dt (V/s) 10 0 = Eyelet term. 12 (gate and aux. cathode unsoldered leads) tq (s) 15 18 1 = Fast-on term. 20 (gate and aux. cathode unsoldered leads) 25 30 2 = Eyelet term. (gate and aux. cathode soldered leads) 3 = Fast-on term. (gate and aux. cathode soldered leads)
CN CM CL CP CK ---
DN DM DL DP DK ---
EN EM EL EP EK ---
FN* FM FL* FP FK ---
--HL HP HK HJ HH
* Standard part number. All other types available only on request.
10
-
Critical dV/dt: None = 500 V/s (standard value) L = 1000 V/s (special selection)
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95074
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Document Number: 93672 Revision: 14-May-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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